The CSD17382F4 gate ESD structure can be thought of as two series diodes with common cathodes with an anode connected to gate and an anode connected to source.
A 3D technology is used to design ESD protection devices. Based on back-to-back diodes, these devices are dedicated to first stage, external ESD protection.
Under ESD condition, P-well is charged positive using a trigger circuit and parasitic bipolar consisting of N+, P-well and deep N-well can be turned on. Poly ...
Back to back diodes are also used when the input voltage range is allowed to exceed the power supply. Figure 4 shows an amplifier that implements back to back ...